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| SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 OCTOBER 1995 FEATURES * 400 Volt VCEO FMMT458 E C COMPLEMENTARY TYPE PARTMARKING DETAIL FMMT558 B 458 SOT23 SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg MIN. 400 400 5 100 100 100 0.2 0.5 0.9 0.9 100 100 15 50 300 MHz 5 135 Typical 2260 Typical pF ns ns MAX. VALUE 400 400 5 225 1 200 500 -55 to +150 UNIT V V V nA nA nA V V V V UNIT V V V mA A mA mW C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO ELECTRICAL CHARACTERISTICS (at Tamb = 25C). CONDITIONS. IC=100A IC=10mA* IE=100A VCB=320V VCE=320V VEB=4V IC=20mA, IB=2mA* IC=50mA, IB=6mA* IC=50mA, IB=5mA* IC=50mA, VCE=10V* IC=1mA, VCE=10V IC=50mA, VCE=10V* IC=100mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz IC=50mA, VCC=100V IB1=5mA, IB2=-10mA VCEO(sus) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo ton toff Transition Frequency Collector-Base Breakdown Voltage Switching times *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 112 FMMT458 TYPICAL CHARACTERISTICS IC/IB=10 1.6 1.4 IC/IB=20 IC/IB=50 Tamb=25C 1.6 1.4 1.2 1.0 0.8 0.6 -55C +25C +100C +175C IC/IB=10 - (Volts) 1.2 1.0 0.8 0.6 V 0.4 0.2 0 0.001 0.01 0.1 1 10 20 V 0.4 0.2 0 0.001 0.01 0.1 1 10 20 I+ - Collector Current (Amps) - (Volts) I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 +100C +25C -55C VCE=10V 1.6 300 1.4 -55C +25C +100C +175C IC/IB=10 - (Volts) V 1.2 1.0 0.8 0.6 0.4 0.2 0 200 100 h 0 0.001 0.01 0.1 1 10 20 0.001 0.01 0.1 1 10 20 I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC 1.0 VBE(sat) v IC Single Pulse T est at Tamb=25C 1.6 1.4 -55C +25C +100C +175C VCE=10V I - Collector Current (Amps) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 0.1 0.01 D.C. 1s 100ms 10ms 1.0ms 0.1ms V 0.001 1 I+ - Collector Current (Amps) V+- - Collector Voltage (Volts) 10 100 1000 VBE(on) v IC Safe Operating Area 3 - 113 |
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